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1N4001G05 - GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

1N4001G05_4956280.PDF Datasheet

 
Part No. 1N4001G05
Description GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

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EIC discrete Semiconductors



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PART Description Maker
1.5KE350 1.5KE7.5 1.5KE100 1.5KE400 1N6300 15KE 1. 160 V, 1500 W, glass passivated junction transient voltage suppressor
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 玻璃钝化结瞬态电压抑制器
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   GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
TRANSYS Electronics Limited
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Transys Electronics Ltd.
TRSYS
http://
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15KPJ45 15KPJ45A 15KPJ45C 15KPJ45CA 15KPJ58 15KPJ5 Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A.
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A.
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态(电压抑制电压20伏特175000脉冲峰值功率)
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态(电压抑制电压20伏特75000脉冲峰值功率)
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态(电压抑制电压220伏特75000脉冲峰值功率)
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
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Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 200V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 1000V
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1SMB8.5A 1SMB6.0A 1SMB6.5A 1SMB8.0A 1SMB15A 1SMB7. UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS/ 5.0 THRU 170 VOLTS
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电.0V,单向玻璃钝化节点瞬变电压抑制
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PT 1.5/ 9-3.5-V 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 5.0 THRU 170 VOLTS 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电0V,单向玻璃钝化节点瞬变电压抑制 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Central Semiconductor C...
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GNOA05 GLASS PASSIVATED JUNCTION
EIC discrete Semiconductors
 
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